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VLMKE340.
Vishay Semiconductors
Bicolor SMD LED PLCC-4
FEATURES * SMD LED with exceptional brightness * Multicolored * Luminous intensity categorized e3 * EIA and ICE standard package * Compatible with automatic placement equipment * Suitable for IR reflow and TTW soldering * Available in 8 mm tape * Low profile package * Non-diffused lens: excellent for coupling to light pipes and backlighting * Low power consumption * Luminous intensity ratio in one packaging unit IVmax/IVmin 1.6 * Lead (Pb)-free product - RoHS compliant lead (Pb)-free soldering * JEDEC level 2a APPLICATIONS * Automotive: backlighting in dashboards and switches * Telecommunication: indicator and backlighting in telephone and fax * Indicator and backlight for audio and video equipment * Indicator and backlight in office equipment * Flat backlight for LCDs, switches and symbols * General use
19211
DESCRIPTION These devices have been designed to meet the increasing demand for surface mounting technology. The package of the VLMKE340. is the PLCC-4. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. This SMD device consists of a red and yellow chip. So it is possible to choose the color in one device. PRODUCT GROUP AND PACKAGE DATA * Product group: LED * Package: SMD PLCC-4 * Product series: bicolor * Angle of half intensity: 60 PARTS TABLE
PART VLMKE3400-GS08 VLMKE3400-GS18 VLMKE3401-GS08 VLMKE3401-GS18
COLOR, LUMINOUS INTENSITY Red/yellow, IV > 56 mcd Red/yellow, IV > 56 mcd Red/yellow, IV > 71 mcd Red/yellow, IV > 71 mcd
TECHNOLOGY AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs
Document Number 81229 Rev. 1.1, 30-Aug-07
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VLMKE340.
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1) VLMKE340.
PARAMETER Reverse voltage per diode2) DC Forward current per diode Surge forward current per diode Power dissipation per diode Junction temperature Operating temperature range Storage temperature range Thermal resistance junction/ ambient mounted on PC board (pad size > 16 mm2) TEST CONDITION IR = 10 A Tamb 80 C tp 10 s SYMBOL VR IF IFSM PV Tj Tamb Tstg RthJA VALUE 6 30 0.1 80 125 - 40 to + 100 - 40 to + 100 560 UNIT V mA A mW C C C K/W
Note: 1) T amb = 25 C, unless otherwise specified 2) Driving the LED in reverse direction is suitable for short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMKE340., RED
PARAMETER Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance TEST CONDITION IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz PART VLMKE3400 VLMKE3401 SYMBOL IV IV d p VF VR Cj 6 15 MIN 56 71 630 643 60 1.9 2.6 TYP. MAX 180 140 UNIT mcd mcd nm nm deg V V pF
Note: 1) Tamb = 25 C, unless otherwise specified
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMKE340., YELLOW
PARAMETER Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance TEST CONDITION IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz PART VLMKE3400 VLMKE3401 SYMBOL IV IV d p VF VR Cj 6 15 MIN 90 112 581 588 590 60 2 2.6 TYP. MAX 280 224 594 UNIT mcd mcd nm nm deg V V pF
Note: 1) Tamb = 25 C, unless otherwise specified
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Document Number 81229 Rev. 1.1, 30-Aug-07
VLMKE340.
Vishay Semiconductors
LUMINOUS INTENSITY CLASSIFICATION AND GROUP COMBINATIONS TLMKE34..1)
RED P2 56...71 mcd Q2 90...112 mcd Y E L L O W R1 112...140 mcd R2 140...180 mcd S1 180...224 mcd S2 224...280 mcd Note: 1) followed by 00 or 01 00 00 00 00 00 Q1 71...90 mcd 00 00 01 00 01 00 01 00 Q2 90...112 mcd 00 00 01 00 01 00 01 00 R1 112...140 mcd 00 00 01 00 01 00 01 00 R2 140...180 mcd 00 00 00 00 00
COLOR CLASSIFICATION
DOMINANT WAVELENGTH (NM) GROUP MAX 1 2 3 4 5 6 581 583 585 587 589 591 YELLOW MAX 584 586 588 590 592 594
TYPICAL CHARACTERISTICS Tamb = 25 C, unless otherwise specified
40 35 IF - Forward Current (mA) 30 25 20 1 chip on 15 10 5 0 0
19476
1000 tP/T = 0.01
60 C 2 chips on
80 C
IFM - Forward Current (mA)
0.02 0.05 0.1 100 0.2 0.5
1 10 0.01
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C)
0.1
1
10
100
16621
tP - Pulse Length (ms)
Figure 1. Forward Current vs. Ambient Temperature for InGaN
Figure 2. Forward Current vs. Pulse Duration
Document Number 81229 Rev. 1.1, 30-Aug-07
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VLMKE340.
Vishay Semiconductors
0 10 20 30
IV rel - Relative Luminous Intensity
2.0 IV rel - Relative Luminous Intensity 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0
16618-1
Red
40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6
95 10319
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C)
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
100
10 IV rel - Relative Luminous Intensity
Yellow/Red
IF - Forward Current (mA)
Yellow/Red
1.0
10
0.1
1 1.0
95 10878-1
0.01
1.5 2.0 2.5 3.0
1
96 11588-1
VF - Forward Voltage (V)
10 IF - Forward Current (mA)
100
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Relative Luminous Intensity vs. Forward Current
1.6
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0
95 10880-1
IF = 20 mA
Yellow I rel - Relative Intensity
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C)
1.2 1.1 Red 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 610 620 630 640 650 660 670 680 690 700 - Wavelength (nm)
IV rel - Relative Luminous Intensity
96 12075-1
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
Figure 8. Relative Intensity vs. Wavelength
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Document Number 81229 Rev. 1.1, 30-Aug-07
VLMKE340.
Vishay Semiconductors
1.2 1.1 IF = 20 mA Yellow 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 550 560 570 580 590 600 610 620 630 640 650 - Wavelength (nm)
VF rel - Relative Forward Voltage (V)
2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 1.75 1.70 1.65 0 10 20 30 40 50 60 70 80 90 100 IF = 20 mA Yellow
IV rel - Relative Luminous Intensity
95 10881-1
16616
Tamb - Ambient Temperature (C)
Figure 9. Relative Intensity vs. Wavelength
Figure 11. Relative Forward Voltage vs. Ambient Temperature
2.10
V Frel - Relative Forward Voltage
2.05 2.00 1.95 1.90 1.85 1.80 1.75 1.70 1.65 1.60 0
I F = 20 mA
Red
10
20
30
40
50
60
70
80
90 100
16617
Tamb - Ambient Temperature (C)
Figure 10. Relative Forward Voltage vs. Ambient Temperature
PACKAGE DIMENSIONS in millimeters
Mounting Pad Layout
4 1.2 2.6 (2.8) 0.5 1.6 (1.9) area covered with solder resist Dimensions: IR and Vaporphase (Wave Soldering)
19899
Document Number 81229 Rev. 1.1, 30-Aug-07
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VLMKE340.
Vishay Semiconductors
METHOD OF TAPING/POLARITY AND TAPE AND REEL SMD LED (VLM.3 - SERIES) Vishay's LEDs in SMD packages are available in an antistatic 8 mm blister tape (in accordance with DIN IEC 40 (CO) 564) for automatic component insertion. The blister tape is a plastic strip with impressed component cavities, covered by a top tape. REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS08 (= 1500 PCS.)
120
10.0 9.0
Adhesive Tape
4.5 3.5 2.5 1.5
Blister Tape
13.00 12.75 63.5 60.5
Identification Label: Vishay Type Group Tape Code Production Code Quantity
Component Cavity
94 8670
180 178
14.4 max.
94 8665
TAPING OF VLM.3...
3.5 3.1 2.2 2.0
Figure 13. Reel dimensions - GS08
5.75 5.25 3.6 3.4
1.85 1.65
4.0 3.6 8.3 7.7
REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS18 (= 8000 PCS.) PREFERRED
10.4 8.4
120
0.25
1.6 1.4
4.1 3.9
2.05 1.95
4.1 3.9
94 8668
4.5 3.5 2.5 1.5
13.00 12.75 62.5 60.0
Figure 12. Tape dimensions in mm for PLCC-2
Identification Label: Vishay Type Group Tape Code Production Code Quantity
321 329
14.4 max.
18857
Figure 14. Reel dimensions - GS18
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Document Number 81229 Rev. 1.1, 30-Aug-07
VLMKE340.
Vishay Semiconductors
SOLDERING PROFILE
IR Reflow Soldering Profile for lead (Pb)-free soldering
Preconditioning acc. to JEDEC Level 2a
300
255 C 255C 240 C 217 C max. 260 C 245 C
250 Temperature (C)
200
max. 30 s
150
max. 120 sec max. 100 sec
100
max. Ramp Up 3 C/sec max. Ramp Down 6 C/sec
50
0 0
19470-2
50
100
150 Time (s)
200
250
300
max. 2 cycles allowed
Figure 15. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020B)
TTW Soldering 300 250 Temperature (C) 200 150 100 50 0 0 50 100 Time (s) 150 200 250 2 K/s forced cooling ca. 5 K/s 235 C...260 C first wave ca. 200 K/s 100 C...130 C second wave ca. 2 K/s full line: typical dotted line: process limits 5s
(acc. to CECC00802) 948626-1
Lead Temperature
RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: * Storage temperature 10 C to 30 C * Storage humidity 60 % RH max. After more than 672 h under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 h at 40 C + 5 C/ - 0 C and < 5 % RH (dry air/nitrogen) or 96 h at 60 C + 5 C and < 5 % RH for all device containers or 24 h at 100 C + 5 C not suitable for reel or tubes. An EIA JEDEC standard JESD22-A112 level 2a label is included on all dry bags.
LEVEL This bag contains MOISTURE -SENSITIVE DEVICES
CAUTION
2a
1. Shelf life in sealed bag 12 months at <40C and < 90% relative humidity (RH) 2. After this bag is opened devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. 260C) must be: a) Mounted within 672 hours at factory condition of < 30C/60%RH or b) Stored at <10% RH. 3. Devices require baking before mounting if: a) Humidity Indicator Card is >10% when read at 23C + 5C or b) 2a or 2b is not met. 4. If baking is required, devices may be baked for: 192 hours at 40C + 5C/-0C and <5%RH (dry air/nitrogen) or o or 96 hours at 605 Cand <5%RH For all device containers 24 hours at 1005C Not suitable for reels or tubes Bag Seal Date: ______________________________ (If blank, see bar code label) Note: LEVEL defined by EIA JEDEC Standard JESD22-A113
19786
Figure 16. Double Wave Soldering of Opto Devices (all Packages)
DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage.
Aluminum bag
Example of JESD22-A112 level 2a label ESD PRECAUTION Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the antistatic shielding bag. Electro-static sensitive devices warning labels are on the packaging. VISHAY SEMICONDUCTORS STANDARD BAR CODE LABELS The Vishay Semiconductors standard bar code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Semiconductors specific data.
Label
Reel
15973
FINAL PACKING The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes.
Document Number 81229 Rev. 1.1, 30-Aug-07
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VLMKE340.
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 81229 Rev. 1.1, 30-Aug-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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